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Calculation of the shear stresses in (111)‐ and (001) semiconductor substrates with film edges
Author(s) -
Fischer A.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200114
Subject(s) - isotropy , materials science , semiconductor , shear (geology) , maxima , diamond , shear stress , crystal (programming language) , enhanced data rates for gsm evolution , composite material , condensed matter physics , optics , optoelectronics , physics , engineering , art , programming language , performance art , computer science , art history , telecommunications
Assuming a film‐edge induced stress distribution in an isotropic crystal, the shear stresses in the glide systems of a diamond‐type semiconductor substrate are calculated. Quantitative information on magnitude and position of the respective shear stress maxima is obtained in dependence on crystal orientation and technologically relevant film configurations.