Premium
Thermodynamic approach to the problem of A 3 B 5 crystals with an optimum structural perfection
Author(s) -
Barchuk A. B.,
Ivashchenko A. I.,
Kopanskaya F. Ya.
Publication year - 1985
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170200110
Subject(s) - crystal (programming language) , impurity , crystallographic defect , perfect crystal , crystal structure , semiconductor , lattice (music) , thermodynamics , materials science , chemistry , condensed matter physics , crystallography , physics , optoelectronics , organic chemistry , computer science , vacancy defect , acoustics , programming language
Thermodynamics of A 3 B 5 semiconductor crystal, containing impurity and native point defects is considered. The main limit of the present analysis is the absence of a significant interaction between point defects at thermal equilibrium. It is shown that the difference of the chemical potentials of A 3 and B 5 components may serve as a structural sensitive thermodynamic function of a crystal. The optimization of the crystal perfection may be obtained when this function becomes zero. In the case of undoped A 3 B 5 crystal such a situation corresponds to the ideal lattice perfection. In the case of doped crystal the effects of native point defects and their interaction with the impurity on the electronic properties of the crystal have to be reduced. The developed thermodynamic approach has been applied to the quantitative analysis of the available experimental data (GaAs, GaP, GaAs:Si and GaP:In). The results of the calculation are in reasonable agreement with the experiment.