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Structure investigations of the Ge‐GeO 2 system by high‐resolution electron microscopy
Author(s) -
Werner P.,
Rozhanski N. V.,
Arslambecov A. V.,
Heydenreich J.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170191216
Subject(s) - oxide , amorphous solid , electron microscope , materials science , crystallography , hexagonal crystal system , crystal (programming language) , crystal structure , electron , resolution (logic) , chemistry , optics , physics , artificial intelligence , computer science , programming language , quantum mechanics , metallurgy
The crystal structure of thermally oxidized Ge was investigated by high‐resolution electron microscopy (HREM), mainly the interface Ge/oxide. Under special conditions the reaction Ge + O 2 → GeO 2 which takes place at (111) surface planes leads to suitable thin crystal regions. The GeO 2 occurs normally as amorphous films on the crystal surface. Furthermore, hexagonal GeO 2 can grow at the interface Ge/oxide by a topotaxial reaction; the orientation relation between these two lattices was ascertained. Intensive electron irradiation was used to initiate and to observe structure changes in boundary regions.