On the distribution coefficient of sulphur during the crystallization of GaP from nonstoichiometric gallium melts | Zendy

Koi H. | Zendy; Hein K. | Zendy; Siegel W. | Zendy

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On the distribution coefficient of sulphur during the crystallization of GaP from nonstoichiometric gallium melts

Author(s) -

Koi H.,

Hein K.,

Siegel W.

Publication year - 1984

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170191208

Subject(s) - crystallization , gallium , sulfur , partition coefficient , analytical chemistry (journal) , doping , temperature coefficient , materials science , atmospheric temperature range , chemistry , thermodynamics , metallurgy , chromatography , organic chemistry , optoelectronics , physics , composite material

GaP grown by the SSD technique was doped by sulphur in a wide concentration range. Using chemical, electrical and radiochemical methods the concentration and temperature dependence of the distribution coefficient k during this crystallization from the nonstoichiometric melt was determined. With the crystallization temperature at 1000°C for k a value 6.9 ± 1.4 was found independent on the sulphur quantity added. The distribution coefficient decreases clearly with increasing temperature.

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