Premium
On the distribution coefficient of sulphur during the crystallization of GaP from nonstoichiometric gallium melts
Author(s) -
Koi H.,
Hein K.,
Siegel W.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170191208
Subject(s) - crystallization , gallium , sulfur , partition coefficient , analytical chemistry (journal) , doping , temperature coefficient , materials science , atmospheric temperature range , chemistry , thermodynamics , metallurgy , chromatography , organic chemistry , optoelectronics , physics , composite material
GaP grown by the SSD technique was doped by sulphur in a wide concentration range. Using chemical, electrical and radiochemical methods the concentration and temperature dependence of the distribution coefficient k during this crystallization from the nonstoichiometric melt was determined. With the crystallization temperature at 1000°C for k a value 6.9 ± 1.4 was found independent on the sulphur quantity added. The distribution coefficient decreases clearly with increasing temperature.