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Basic steps and layer homogeneity in CVD [II]
Author(s) -
Arnold H.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170191022
Subject(s) - homogeneity (statistics) , chemical vapor deposition , doping , surface diffusion , surface layer , materials science , realization (probability) , layer (electronics) , chemistry , chemical physics , nanotechnology , mineralogy , chemical engineering , optoelectronics , computer science , mathematics , engineering , adsorption , machine learning , statistics
Taking into account reactant depletion, gas diffusion, surface processes, and a fourth basic step that is connected with the influence of surface equilibria, the compensation of depletion is treated for both host material deposition and in‐situ doping. So, some aspects can be given for the realization of layer homogeneity in epitaxy, as well as in LPCVD. In conclusion, the terminology of border cases in CVD is discussed.