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Activity coefficient and incorporation of Phosphorus into epitaxial CVD Silicon
Author(s) -
Kühne H.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190914
Subject(s) - dopant , doping , ionization , epitaxy , silicon , chemistry , ideal (ethics) , thermodynamics , materials science , law , physics , ion , optoelectronics , organic chemistry , layer (electronics) , political science
Abstract The present paper is concerned with the dopant incorporation behaviour at high doping concentrations, at which the conditions for diluted solutions are commonly considered no longer fulfilled. The first part contains a brief discussion of the theoretical aspects of ideal, ideally diluted and real solutions, and Raoult's law as well as Henry's law are reduced to the general solution equilibrium, applied to dopant incorporation. The second part considers the dopant ionization equilibrium according to the conception of R EISS , additionally taking into account the high deposition temperatures. It had been concluded that at high doping concentrations both the ionization equilibrium and the solution equilibrium of dopants behave analogous to real solutions, and both equilibria need a correction by special activity coefficients.