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Basic steps and layer homogeneity in CVD (I)
Author(s) -
Arnold H.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190908
Subject(s) - homogeneity (statistics) , chemical vapor deposition , depletion region , doping , chemistry , nonlinear system , materials science , epitaxy , layer (electronics) , chemical engineering , chemical physics , nanotechnology , optoelectronics , physics , computer science , quantum mechanics , machine learning , engineering
As a first basic step in chemical vapor deposition (CVD), reactant depletion within batchtype reactors is treated. By introduction of a depletion resistance into the circuit representation of epitaxy and of LPCVD processes, the joint treatment of problems concerning layer thickness and doping homogeneity becomes more transparent. In the case of compensated depletion, this resistance increases linearly with the distance from the reactor input, and is independent on the kind of reactants if gas diffusion is negligible in the down stream direction. Without compensation it becomes nonlinear in the downstream local coordinate and depends on the resistance of the subsequent basic steps. Aspects of lowering the depletion are discussed.