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The growth of oxide precipitates during intrinsic getter formation
Author(s) -
Pekarev A. I.,
Nemtsev G. Z.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190907
Subject(s) - getter , nucleation , annealing (glass) , materials science , oxide , isothermal process , silicon , boron , oxygen , crystal growth , chemical engineering , crystallography , chemistry , metallurgy , thermodynamics , optoelectronics , physics , organic chemistry , engineering
The simulation of the process of the intrinsic oxide getter (IOG) formation in terms of the precipitate growth depending on oxygen concentration in single‐crystal silicon and the nucleation temperature is done. The conditions of annealing at continuously increasing temperature and those of two‐stage and isothermal anneals are calculated. The possibility of intrinsic getter formation in Si with the boron concentration of 1.10 15 and that of oxygen 6–8.10 17 cm −3 during a two‐step annealing is experimentally evaluated (according to the density of microdefects). The temperature of the most rapid growth of IOG predicted due to the simulation is defined.