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Metallographic and electron microscopical analysis of microdefects in Fz‐silicon crystals
Author(s) -
Hoffmann K.,
Pasemann M.,
Sevcik S.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190724
Subject(s) - hillock , wafer , silicon , dislocation , materials science , agglomerate , crystallography , polishing , electron microscope , vacancy defect , isotropic etching , electron , etching (microfabrication) , optics , optoelectronics , composite material , chemistry , physics , layer (electronics) , quantum mechanics
In dislocation‐free floating‐zone silicon crystals two types of microdefects were observed and analyzed by means of optical and electron‐microscopical methods. Microdefects of type I occur in swirl‐type arrangements throughout the whole wafer and appear as etch hillocks below which one can find second phase particles. Due to the chemical‐mechanical polishing near the wafer surface microdefects of type II are generated which also occur in spiral arrangements. These defects could be identified to be plate‐like vacancy agglomerates on {111} planes.