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Studies on syntactically coalesced Silicon Carbide polytype structures
Author(s) -
Singh S. R.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190413
Subject(s) - silicon carbide , coalescence (physics) , crystallography , materials science , silicon , period (music) , crystal structure , chemistry , physics , metallurgy , astrobiology , acoustics
The structure of two new silicon carbide polytypes, found in syntactic coalescence with a basic structure 6 H, have been worked out. The structure of polytype 21 H is [(33) 2 63] and that of polytype 93R is [(33) 4 34] 3 . The polytype 93R belongs to the structure series [(33) n 34] 3 . One of the (00.1) growth face reveals the growth spiral. The splitting of diffraction spots indicates the existence of a high period polytype in the crystal. This high period polytype have been identified as 558H or 1674R. The growth mechanism have been discussed in the light of above observations.