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Precision measurements of plastic deformation of β‐CuZn at helium temperatures
Author(s) -
Takeuchi S.,
Hashimoto T.,
Maeda K.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190310
Subject(s) - atmospheric temperature range , strain rate , materials science , enthalpy , thermodynamics , strain (injury) , cryostat , condenser (optics) , creep , deformation (meteorology) , oscillation (cell signaling) , helium , activation energy , constant (computer programming) , composite material , condensed matter physics , chemistry , atomic physics , optics , physics , superconductivity , medicine , light source , biochemistry , computer science , programming language
By attaching condenser plates directly to the tensile specimen, creep rates of β‐CuZn single crystals have been measured by the capacitance change in the strain‐rate range of 10 −7 to 10 −5 s −1 and at temperatures between 0.7 and 17 K using a 3 He cryostat. Slope of the temperature variation of the stress to give a constant strain‐rate decreases below 5 K and seems to level off at 0 K. The strain‐rate sensitivity becomes almost constant below 2 K. The conventional activation analysis showed that an A RRHENIUS type strain‐rate equation breaks down drastically below 5 K. For an effective temperature T * which gives 2 K at 0 K and asympototically coincides with the testing temperature at 5 K, the experimental results can be fitted to the A RRHENIUS strain‐rate equation with an activation enthalpy Δ H (τ) for the P EIERLS mechanism. The above result is interpreted in terms of the quantum‐mechanical oscillation of the dislocations.