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Concentration dependence of the electron diffusion length in p‐type GaAs
Author(s) -
Vigil E.,
Diaz P.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190220
Subject(s) - diffusion , electron , impurity , doping , recombination , electron mobility , chemistry , radiative transfer , condensed matter physics , analytical chemistry (journal) , materials science , atomic physics , physics , thermodynamics , optics , biochemistry , organic chemistry , chromatography , quantum mechanics , gene
Abstract The concentration dependence of the electron diffusion length in p‐type GaAs is analyzed based on experimental values reported in the literature and recent studies of minority carriers mobility in GaAs. The dependence of L n with doping impurity concentration is determined for τ nr ≫ τ r and good agreement is found with highest reported experimental values of L n ; considerations are made about τ nr . The dependence of electron mobility, diffusion constant, and radiative recombination lifetime on concentration are also given.

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