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Chemical kinetics of dissolution of BaMoO 4 crystals
Author(s) -
Arora S. K.,
Trivikrama Rao G. S.,
Batra N. M.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190205
Subject(s) - dissolution , kinetics , diffusion , etching (microfabrication) , flux (metallurgy) , rate equation , materials science , isotropic etching , diffusion process , chemical engineering , chemical physics , chemistry , thermodynamics , nanotechnology , metallurgy , knowledge management , innovation diffusion , physics , layer (electronics) , quantum mechanics , computer science , engineering
Abstract An etchant capable of revealing the sites of dislocations in the flux‐grown crystals of BaMoO 4 has been established. Using this etchant (HNO 3 ), effect of etching time, acid concentration and temperature on the selective etch rate is demonstrated. It is established that the process of dissolution in unstirred HNO 2 solutions is one of the diffusion rate controlled; an empirical equation governing the kinetics has been suggested.