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Study of electrical properties in mixed oxide sandwich structures
Author(s) -
Siva Kumar J.,
Narayana G.,
Chandra Shekar M.,
Subba Rao U. V.,
Hari Babu V.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190119
Subject(s) - dielectric strength , materials science , breakdown voltage , ohmic contact , electrical breakdown , oxide , dielectric , composite material , voltage , electric breakdown , optoelectronics , electrical engineering , metallurgy , layer (electronics) , engineering
I—V characteristics of sandwiched Al—(SnO 2 + Sb 2 O 3 )—Al mixed films have been studied for different thicknesses. The current‐voltage curves in general exhibit three regions, ohmie, non‐ohmic and breakdown regions. The breakdown voltage increases and the dielectric strength decreases with increase of film thickness. The de breakdown studies have been done and optical photomicrographs of breakdown patterns during different stages of de voltage have been taken and the results are discussed.