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Influence of the graduated composition region on the properties of GaInAs epitaxial layers grown on GaAs substrates
Author(s) -
Popov A.,
Ivanov I.
Publication year - 1984
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170190115
Subject(s) - epitaxy , indium , layer (electronics) , substrate (aquarium) , materials science , crucible (geodemography) , composition (language) , lattice (music) , chemistry , crystallography , optoelectronics , nanotechnology , computational chemistry , geology , linguistics , philosophy , oceanography , physics , acoustics
The electrical properties of Ga 1‐ x In x As layers (0 < x < 0.3) are investigated. The layers are grown on <111> oriented GaAs substrates. A transition layer is grown with an increasing indium content to decrease the mismatch of the lattice parameters of the substrate and the final layer. A special many‐section crucible is used. In dependence on composition the decrease both of mobility and carrier concentration with the increase of compensation is observed. These facts are connected with the introducing of additional acceptors without donor concentration changes.