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Doping process control in silicon epitaxy (II). Calculation of optimum control
Author(s) -
Valkó P.,
Kósza G.,
Richter F.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181219
Subject(s) - weighting , dopant , epitaxy , doping , function (biology) , optimal control , silicon , process (computing) , control theory (sociology) , layer (electronics) , materials science , control (management) , mathematics , computer science , mathematical optimization , optoelectronics , nanotechnology , physics , artificial intelligence , acoustics , evolutionary biology , biology , operating system
A procedure is developed to obtain desired dopant profile in epitaxial layer growth. Based an the results of system identification, linear‐quadratic optimal control theory is used to determine the optimal input PH 3 concentration as a function of time. In the performance index an auxiliary weighting coefficient must be incorporated. It is discussed how to select this weighting coefficient.