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The influence of gas‐phase etch removal, deposition temperature and substrate properties on the crystallographic perfection of silicon epitaxial layers
Author(s) -
Richter F.,
Weidner G.,
Borchardt A.,
Bugiel E.,
Kittler M.,
Schmalz K.,
Weidner M.,
Rausch H.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181216
Subject(s) - epitaxy , layer (electronics) , substrate (aquarium) , materials science , silicon , deposition (geology) , etching (microfabrication) , impurity , phase (matter) , chemical engineering , gas phase , crystallography , optoelectronics , nanotechnology , chemistry , organic chemistry , geology , paleontology , oceanography , sediment , engineering
An investigation of the defect structure of silicon homoepitaxial layers, as influenced by gas phase etching, deposition temperature, and substrate properties, is presented. The minimum values of etch removal and deposition temperature necessary for sufficient layer perfection have been determined. The defect and impurity distribution in the substrate, as formed during a preceeding arsenic buried layer processing, have been evaluated and are discussed here with regard to their influence on the epitaxial layer perfection.