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Electrical characteristics of GaAs LPE schottky diodes
Author(s) -
Konakova R. V.,
Tkhorik Yu. A.,
Zaitsevskii I. L.,
Benč V.,
Morvic M.,
Kordoš P.,
Červenák J.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181131
Subject(s) - epitaxy , schottky diode , diode , materials science , optoelectronics , liquid phase , phase (matter) , schottky barrier , chemistry , nanotechnology , physics , layer (electronics) , organic chemistry , thermodynamics
Structural and electrical properties of IMPATT diodes prepared from homoepitaxial GaAs films grown by liquid phase epitaxy have been investigated with the help of metallography and reverse I–V characteristic derivatives. The structural defects in epitaxial layers have been shown lead to the localization of current in separate regions (microplasmas) which brings up a soft breakdown. A method as been proposed for the observation of microplasmas at large currents.