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I–V characteristics and break down studies of Sb 2 O 3 structures
Author(s) -
Kumar J. Siva,
Narayana G.,
Shekar M. Chandra,
Rao U. V. Subba,
Babu V. Hari
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181128
Subject(s) - ohmic contact , breakdown voltage , materials science , dielectric strength , voltage , electrical breakdown , dielectric , electric breakdown , condensed matter physics , analytical chemistry (journal) , composite material , optoelectronics , electrical engineering , chemistry , physics , layer (electronics) , chromatography , engineering
I–V characteristics of sandwiched Al–Sb 2 O 3 –Al structures have been studied for different thicknesses. The current‐voltage curves in general exhibit three regions, ohmic, non ohmic and breakdown regions. The breakdown voltage increases whereas the dielectric strength decreases with increase in Sb 2 O 3 film thickness. The electrical breakdown studies have been done for dc and ac voltages and optical photomicrographs of breakdown patterns during different stages of voltage have been taken and the results are explained.