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Analysis of stress distribution in semiconductor substrates with film edges
Author(s) -
Fischer A.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181121
Subject(s) - superposition principle , stress (linguistics) , enhanced data rates for gsm evolution , semiconductor , materials science , crystal (programming language) , distribution (mathematics) , impurity , condensed matter physics , optics , mathematical analysis , mathematics , physics , optoelectronics , computer science , quantum mechanics , programming language , telecommunications , philosophy , linguistics
Assuming a relaxing film stress in the edge region and a resulting superposition of partial surface stresses, the respective stress distribution in the crystal is calculated. For practical estimates of the stress values an approximate solution is given. The results are discussed with respect to the generation of defects at film edges.