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On the scandium distribution in indium arsenide crystals grown by the Czochralski method
Author(s) -
Lilov S. K.,
Yakimova R. T.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181113
Subject(s) - scandium , indium , monocrystalline silicon , ampoule , crystallization , hall effect , indium arsenide , materials science , gallium arsenide , analytical chemistry (journal) , chemistry , crystallography , inorganic chemistry , optoelectronics , silicon , electrical resistivity and conductivity , organic chemistry , engineering , chromatography , electrical engineering
In this paper the behaviour of scandium in n‐type monocrystalline indium arsenide grown by Czochralski method in sealed ampoule is studied. The crystals have been grown in [111] direction under different conditions: crystallization rate, As‐partial pressure and scandium initial concentration in the melt. The effect of the above factors on the scandium distribution along the crystals have been investigated. Using these results and by means of the equation of normal freezing the effective Sc distribution coefficient ( k ) in InAs under different technological conditions has been determined. It has been found that k < 1 in all experiments. In order to find the equilibrium coefficient ( k 0 ) at fixed growth conditions the Burton‐Prim‐Slichter model has been used. On the basis of Hall measurements and atomic absorption analysis of Sc‐doped InAs it is concluded that connected with Sc electrically active centers behave as shallow donors, most probably monovalent ones.