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Investigations on the HCl gas‐phase etching of differently doped and oriented gaas crystals
Author(s) -
Dorshchand S.,
Däweritz L.,
Berger H.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181109
Subject(s) - dopant , dissolution , etching (microfabrication) , anisotropy , doping , materials science , isotropic etching , phase (matter) , gas phase , phase transition , mineralogy , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , thermodynamics , optics , optoelectronics , organic chemistry , physics , layer (electronics)
The influence of the orientation and dopant on the dissolution of GaAs surfaces in H 2 –HCl gas mixtures has been investigated. For this purpose the etch rates, temperature regions of different etching behaviour and the corresponding activation energies were determined for temperatures ranging from 540 °C to 945 °C. The etch rate anisotropy is correlated with the three existing temperature regions of different dissolution mechanisms. The orientation‐dependent transition temperatures are influenced by the dopant and can be related to the thermodynamic data of the dopant.