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Application of the iodide synthesis to the preparation of indium arsenide bulk crystals and epitaxial layers
Author(s) -
Trifonova E. F.,
Karagiozov L.,
Hitova L.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181104
Subject(s) - epitaxy , indium , impurity , iodide , indium arsenide , materials science , iodine , gallium arsenide , optoelectronics , chemical engineering , crystallography , inorganic chemistry , chemistry , nanotechnology , metallurgy , organic chemistry , layer (electronics) , engineering
Bulk crystals and epitaxial layers have been prepared from iodidely synthesized InAs. Their parameters have been studied and compared with those of high‐temperature synthesized InAs. The synthesis mixture composition substantially effects the electrical parameters of the samples. Iodine is supposed to be a donor‐acting impurity in iodidely synthesized InAs.