Premium
The use of an electrode potential in the investigation of a single‐crystal semiconductor matrix (I). On the nature of structural sensitivity of an electrode potential
Author(s) -
Gulidov D. N.,
Aidelman B. L.,
Kwyatt N. A.,
Chistyakov Yu. D.,
Sverdlin E. A.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170181017
Subject(s) - materials science , silicon , wafer , semiconductor , electrode , anisotropy , matrix (chemical analysis) , electrode potential , etching (microfabrication) , single crystal , crystal (programming language) , electrolyte , composite material , optoelectronics , optics , chemistry , crystallography , physics , layer (electronics) , computer science , programming language
The fields of application of electrode potential measurement technique for the evaluation of structural perfection of single‐crystal semiconductor matrix are considered. The dependence of the silicon stationary potential on the value of elastic stresses in etching electrolytes is investigated. The structural sensitivity of the technique is confirmed by the investigation of planar anisotropy of mechanical damages due to the treatment of silicon wafers with (111) orientation and by the investigation of distribution of thermal elastic stresses in silicon — silicon dioxide interface.