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X‐ray and scanning cathodoluminescence imaging of small‐angle grain boundaries and dislocations in CdTe crystals
Author(s) -
Klimkiewicz M.,
Auleytner J.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180915
Subject(s) - cathodoluminescence , materials science , cadmium telluride photovoltaics , scanning electron microscope , optics , reflection (computer programming) , crystallography , optoelectronics , chemistry , physics , luminescence , composite material , computer science , programming language
By employing the Reflection X‐ray Topography (RXT), on one hand, and the Cathodoluminescence (CL‐IR) mode of operation of the Scanning Electron Microscope, on the other hand, wer are able to visualize the lattice defects in CdTe single crystals. The possibility of defect identification is the advantage of the RXT technique. Moreover, the examined surface can be imaged as a whole. Cathodoluminescence, however, guarantees higher resolution. The defects in CdTe crystals, observed in cathodoluminescence images, have been identified as small‐angle boundaries and screw dislocations.