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Copper precipitation in long‐time processed transistor samples
Author(s) -
Gleichmann R.,
Breitenstein O.,
Mohr U.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180907
Subject(s) - wafer , copper , materials science , transistor , silicon , precipitation , stacking , silicide , crystal (programming language) , crystallographic defect , monolayer , crystallography , single crystal , optoelectronics , metallurgy , nanotechnology , chemistry , electrical engineering , computer science , physics , engineering , organic chemistry , voltage , meteorology , programming language
Process‐induced crystal defects (point defects and extended defects) in completely processed transistor samples of floating zone silicon have been investigated by TEM analysis and DLTS measurements. It was possible to demonstrate that the lifetime of these samples is determined by the introduction of copper during the long‐time processing of the wafers. The predominant crystal defects within the wafer volume were found to be circular monolayers of copper silicide which due to their appearance could be easily confounded with stacking faults.