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Low ohmic multilayer contacts in lead‐Tin‐Telluride diode lasers
Author(s) -
Herrmann Ka.,
Sumpf B.,
Böhme D.,
Hannemann M.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180817
Subject(s) - ohmic contact , lead telluride , materials science , optoelectronics , tin , lasing threshold , laser , telluride , diode , lead (geology) , degradation (telecommunications) , metallurgy , nanotechnology , optics , electrical engineering , doping , wavelength , physics , engineering , layer (electronics) , geomorphology , geology
The preparation and the influence of low ohmic multilayer thin film contacts of lead‐salt homo‐ and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail.