Al  x  Ga 1– x  As/GaAs thin window concentrator solar cells by LPE plus vapour phase diffusion | Zendy

Romero R. | Zendy; Sulima O. V. | Zendy

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Al x Ga 1– x As/GaAs thin window concentrator solar cells by LPE plus vapour phase diffusion

Author(s) -

Romero R.,

Sulima O. V.

Publication year - 1983

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170180813

Subject(s) - equivalent series resistance , concentrator , materials science , open circuit voltage , short circuit , solar cell , optoelectronics , common emitter , thin film , current density , energy conversion efficiency , diffusion , voltage , optics , analytical chemistry (journal) , chemistry , electrical engineering , nanotechnology , physics , chromatography , quantum mechanics , thermodynamics , engineering

Zinc diffusion from the vapour phase on a previously grown LPE nAl x Ga 1– x As/nGaAs sample is discussed for thin window concentrator solar cell manufacture. A high cell shunt resistance and a low series resistance are achieved together with improved optical parameters via an impressed electric field in the emitter. Dark current components are rather low and 21.8% conversion efficiency is measured at AM 1.3. When the photogenerated short circuit current density is 8 A · cm −2 , the fill factor is 0.77 and open circuit voltage is 1140 mv.

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