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Al x Ga 1– x As/GaAs thin window concentrator solar cells by LPE plus vapour phase diffusion
Author(s) -
Romero R.,
Sulima O. V.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180813
Subject(s) - equivalent series resistance , concentrator , materials science , open circuit voltage , short circuit , solar cell , optoelectronics , common emitter , thin film , current density , energy conversion efficiency , diffusion , voltage , optics , analytical chemistry (journal) , chemistry , electrical engineering , nanotechnology , physics , chromatography , quantum mechanics , thermodynamics , engineering
Zinc diffusion from the vapour phase on a previously grown LPE nAl x Ga 1– x As/nGaAs sample is discussed for thin window concentrator solar cell manufacture. A high cell shunt resistance and a low series resistance are achieved together with improved optical parameters via an impressed electric field in the emitter. Dark current components are rather low and 21.8% conversion efficiency is measured at AM 1.3. When the photogenerated short circuit current density is 8 A · cm −2 , the fill factor is 0.77 and open circuit voltage is 1140 mv.