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Influence of film structure on the electron energy loss spectra of GaAs thin films
Author(s) -
Boudriot H.,
Kubier B.,
Deus K.,
Gründler R.,
Kusior E.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180811
Subject(s) - crystallinity , electron , spectral line , thin film , oscillation (cell signaling) , dielectric function , materials science , dielectric , energy (signal processing) , energy spectrum , dielectric loss , plasma , plasma oscillation , electron energy loss spectroscopy , condensed matter physics , atomic physics , chemistry , physics , optoelectronics , nanotechnology , composite material , biochemistry , quantum mechanics , astronomy , nuclear physics
Energy loss measurements of fast electrons on GaAs yielded values for the plasma oscillation, interband transitions and the dielectric function in the region 5 — 30 ev. The results are discussed in comparison with literature statements. It is dealt especially with the influence of the degree of crystallinity of examined GaAs‐films on the energy loss spectrum and the quantities derived from it.