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Metallurgically grown Schottky junction in directionally solidified eutectic Ag–Si alloys
Author(s) -
Arnold Michael,
Frühauf Joachim,
Schneider Helmut Günther
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180808
Subject(s) - schottky diode , materials science , eutectic system , crystallite , grain boundary , schottky barrier , polycrystalline silicon , diode , silicon , semiconductor , doping , electrical resistivity and conductivity , optoelectronics , phase (matter) , composite material , metallurgy , microstructure , electrical engineering , layer (electronics) , chemistry , engineering , thin film transistor , organic chemistry
Metallurgically grown M(metal)–S(semiconductor) phase boundaries in directionally solidified AgSi alloys were investigated relative to their behaviour as Schottky junctions. By the aid of point contacts I/V characteristics have been measured which correspond to these ones of Schottky diodes. The Si crystallites were proved to be n‐doped. Reverse breakdown voltages of 8 … 24 V are not incompatible with the purity of the used materials. In forward direction the value of diode factor n = 1.1 … 5 shows the existence of several current flow mechanisms. In order to be able to interpret the characteristics it is necessary to have exact information on the specific resistivity of the Si crystallites and on the content of grain boundaries and dislocations in silicon. Beyond that the complicated shape of Si crystallites prevents the necessary determination of the interface size.