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On the substructure of epitaxial (Pb, Sn)Te films grown on KCl cleavage faces
Author(s) -
Schenk M.,
Tap Ngo Dien
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180805
Subject(s) - crystallite , substructure , epitaxy , coalescence (physics) , cleavage (geology) , crystallography , diffraction , electron microscope , materials science , scattering , electron diffraction , scanning electron microscope , optics , condensed matter physics , chemistry , nanotechnology , composite material , physics , structural engineering , layer (electronics) , astrobiology , fracture (geology) , engineering
The X‐ray diffraction rocking curve analysis has been employed for the measurement of crystallite sizes of (Pb, Sn)Te films for different thickness, epitaxially grown on KCl cleavage faces by the hot‐wall technique. The size of the coherently scattering regions parallel to the reflecting planes did not depend on film thickness and agreed with the mean distance of nuclei just before coalescence, investigated by means of replica electron microscopy. The results are consistent with a model of stalk‐like growth of crystallites in film growth direction.