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Reactivity of CCl 4 plasma against SiO 2 surfaces
Author(s) -
Tiller H.J.,
Göbel R.,
Breitbarth F.W.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180616
Subject(s) - chemistry , etching (microfabrication) , plasma , analytical chemistry (journal) , reactive ion etching , plasma etching , limiting , ion , nuclear chemistry , layer (electronics) , chromatography , organic chemistry , mechanical engineering , physics , quantum mechanics , engineering
SiO 2 is etched considerably by a CCl 4 plasma at surface power densities of about 0.3 W cm −2 . This etching process is investigated by the SiCl 4 formation with aid of mass spectroscopy where final products of the etching process and the extracted ions were studied in dependence on time in a closed plasma volume. The primary step of the etching process is the activation of SiO 2 by the plasma involving breaking of siloxan bridges. The overall mechanism of the SiO 2 etching by the CCl 4 plasma is proposed in form ofThe rate limiting constants are k 0 and k 3 . The SiCl 4 formation is decreased or inhibited by an admixture of Cl 2 , H 2 , O 2 or CO to the CCl 4 plasma. CCl 4 ‐Plasmen führen zu einem Ätzangriff an SiO 2 ‐Oberflächen. Dieser Ätzprozeß ist bei Leistungsdichten an der zu ätzenden Oberfläche von > 0,3 W cm −2 deutlich über eine SiCl 4 ‐Bildung nachweisbar. Der Primärschritt ist eine Aktivierung der SiO 2 ‐Oberfläche durch das Plasma, die zu Bindungsbrüchen der Siloxanbrücken führt.