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Investigation of the nature of point defects in in Te‐doped gallium antimonide
Author(s) -
Wilke J.,
Bublik V. T.,
Osvenskii V. B.,
Popkov A. N.,
Braginskaya A. G.,
Kolchina P. P.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180612
Subject(s) - gallium antimonide , supersaturation , doping , gallium , antimonide , materials science , antimony , stoichiometry , crystallographic defect , lattice constant , solid solution , analytical chemistry (journal) , crystallography , chemistry , optoelectronics , optics , metallurgy , diffraction , physics , superlattice , organic chemistry , chromatography
Precision lattice constant and density measurements held on gallium antimonide single crystals grown from stoichiometric melts showed that doping of such crystals with Te lead to the intensification of Ga‐supersaturated solid solution decomposition process with initial Frenkel defect (Ga i + V Ga ) production. It is supposed that Te sb — simple donors form complexes with V Ga which are believed to be acceptors. Doping of GaSb with Te up to the levels above 2 · 10 18 cm −3 leads to partial decomposition of GaSb(Te) solid solution supersaturated with Te.