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On the mechanism of chemical polishing of GaAs crystals
Author(s) -
Zach D.,
Löwe H.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180608
Subject(s) - dissolution , polishing , diffusion , wafer , ion , chemistry , chemical reaction , chemical engineering , inorganic chemistry , materials science , nanotechnology , metallurgy , thermodynamics , organic chemistry , engineering , physics
In order to establish reproducible conditions for chemical lap polishing of GaAs with NaOCl solutions, containing also OH − ‐ and CO 3 2–‐ions, the mechanism of dissolution was investigated using the rotating disk arrangement. In solutions with excess OCl − concentrations likewise diffusion and a reaction of the first order with respect to OH − and CO 3 2– , complexing agents for Ga‐ions, control the dissolution rate, and the surfaces of the wafers are polished. OH − and CO 3 2– concentrations in excess with respect to OCl − lead to rate determining OCl − diffusion and to irregularly polished or film covered surfaces. Diffusion constants for OH − , CO 3 2–and OCl − are given.