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Double heterostructure lasers prepared by LPE on medium‐quality GaAs substrates under controlled as vapour conditions
Author(s) -
Novotný J.,
Šrobár F.,
Zelinka J.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180515
Subject(s) - materials science , lasing threshold , laser , epitaxy , heterojunction , double heterostructure , aluminium , optoelectronics , quantum well , arsenic , semiconductor laser theory , semiconductor , optics , nanotechnology , composite material , metallurgy , layer (electronics) , wavelength , physics
The fact that defect formation in (Ga, Al)As LPE layers can be suppressed by the presence of arsenic vapour is employed to improve properties of double heterostructure (DH) lasers. The controlled vapour pressure (CVP) method is implemented using a modified LPE horizontal carbon boat. Growth kinetics study under near‐equilibrium conditions shows that the presence of arsenic vapour diminishes the growth rate of aluminium‐containing layers; no such influence has been observed with the GaAs layers. The CVP method, compared with the customary LPE, has a beneficial effect on the DH surface and cross sections perfection, as well as on the lasing characteristics (differential quantum efficiency, threshold current). Observed values of the parameter T 0 , characterizing temperature dependence of the laser threshold current, fall into the vicinty of 200 K. The results have been obtained on medium‐quality GaAs substrates.