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On batch homogeneity in horizontal CVD reactors (II). HCl gas‐phase etching
Author(s) -
Richter F.,
Morgenstern Th.,
Sperling R.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180514
Subject(s) - homogeneity (statistics) , gas phase , wafer , mechanics , chemistry , boundary layer , etching (microfabrication) , materials science , thermodynamics , analytical chemistry (journal) , layer (electronics) , composite material , chromatography , nanotechnology , physics , statistics , mathematics
A general model of the depletion is given, to which the reactive component of the reaction gas mixture in a horizontal CVD‐reactor is subjected during its flow along the heater. Furthermore the model of heating the process gas, described in Part I of this work, is used to derive an expression of the dependence of the thickness δ of the boundary layer upon the x ‐coordinate (direction of the flow). Both models are combined to get a model of longitudinal homogeneity of wafer processing in an CVD‐reactor, which is applied to the special case of HCl gas phase etching. The predictions derived using the model were compared with experimental results.