Growth of InAs 1– y  Sb  y   solid solutions for obtaining decreased lattice mismatch in the InAs‐GaSb (Al  x  Ga 1– n  Sb) system | Zendy

Pramatarova L. D. | Zendy

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Growth of InAs 1– y Sb y solid solutions for obtaining decreased lattice mismatch in the InAs‐GaSb (Al x Ga 1– n Sb) system

Author(s) -

Pramatarova L. D.

Publication year - 1983

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170180502

Subject(s) - solid solution , antimony , lattice (music) , materials science , semiconductor materials , crystallography , condensed matter physics , chemistry , analytical chemistry (journal) , physics , semiconductor , optoelectronics , metallurgy , chromatography , acoustics

This paper presents the results of investigation of the technological conditions of LPE growth of InAs 1– y Sb y solid solutions on InAs substrates. It is shown that the chosen regions of composition of InAs 1– y Sb y solid solutions and experimentally determined technological conditions allow the obtaining of InAs 1– y Sb y solid solutions with lattice parameter values close to those of the Al x Ga 1– x Sb (0 ≦ x ≦ 0.2) solid solutions.

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