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On batch homogeneity in horizontal CVD reactors (I). Model of heating the process gas
Author(s) -
Richter F.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180416
Subject(s) - homogeneity (statistics) , gas phase , volumetric flow rate , materials science , mechanics , chemistry , thermodynamics , analytical chemistry (journal) , chromatography , physics , statistics , mathematics
A model of heating of the process gas during its flow along the heater is given as a supposition for a modelling of the batch homogeneity with layer deposition and gas phase etching processes in horizontal CVD‐reactors. An analytical expression is derived for the resulting longitudinal temperature profile T(x) in dependence of gas properties, suszeptor temperature, geometric parameters of the reactor, and gas flow rate.