Premium
Influence of intrinsic defects on the electrical properties of A I B III C 2 VI compounds
Author(s) -
Neumann H.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180409
Subject(s) - stoichiometry , acceptor , covalent bond , evaporation , electrical resistivity and conductivity , chemistry , crystallography , materials science , condensed matter physics , thermodynamics , physics , organic chemistry , quantum mechanics
The electrical parameters of undoped melt grown A I B III C VI 2 crystals are compared with predictions which can made considering the deviations from stoichiometry due to the incongruent evaporation of these compounds. It is shown that the electrical properties of all A I B III C 2 VIcompounds can be interpreted in a consistent manner if the electrical activity (donor or acceptor) of the intrinsic defects is considered in the covalent bonding model.