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Electrical properties of AgGaSe 2 epitaxial layers
Author(s) -
Neumann H.,
Nowak E.,
Schumann B.,
Kühn G.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180408
Subject(s) - epitaxy , electrical resistivity and conductivity , substrate (aquarium) , acceptor , materials science , evaporation , analytical chemistry (journal) , flash evaporation , atmospheric temperature range , range (aeronautics) , ionization , conductivity , chemistry , nanotechnology , condensed matter physics , layer (electronics) , composite material , ion , physics , thermodynamics , oceanography , organic chemistry , quantum mechanics , chromatography , geology
Epitaxial layers of AgGaSe 2 with thicknesses in the range from 50 to 70 nm were deposited onto (111)A‐oriented semi‐insulating GaAs substrates by flash‐evaporation in the substrate temperature range T S = 825 … 900 K. Films grown at T S ≦ 850 K are n‐type conducting whereas p‐type conductivity was observed at T S ≧ 875 K. In the p‐type samples two acceptor states with ionization energies of 60 and 410 meV were found from an analysis of the electrical measurements.