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Doping mechanism and properties of Zn‐doped GaN‐epitaxial layers
Author(s) -
Andreev V. M.,
Petrov M. N.,
Pichugin I. G.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180403
Subject(s) - doping , epitaxy , zinc , luminescence , materials science , oxygen , semiconductor , optoelectronics , inorganic chemistry , chemical physics , chemical engineering , nanotechnology , chemistry , layer (electronics) , metallurgy , organic chemistry , engineering
The role of oxygen in the process of doping GaN by Zn is established. It is shown theoretically and experimentally that Zn is dissolved in GaN in the form of complexes ZnO when oxygen or water vapour is present in the ambient of the growth reactor. Most of the complexes are neutral. Only the small part of Zn introduced is situated in electrically active positions. This fact can explain the enormously high Zn concentration which is necessary to obtain the compensation of GaN native donors. The electrical and luminescence properties of GaN epitaxial layers doped by Zn are given and the relation of these properties to the growth and doping conditions are considered.