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Dislocation etching of tin iodide single crystals
Author(s) -
Desai C. C.,
Rai J. L.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180310
Subject(s) - tin , dislocation , etching (microfabrication) , dissolution , iodide , crystallography , materials science , polishing , acetic acid , diffusion , chemistry , analytical chemistry (journal) , inorganic chemistry , nanotechnology , metallurgy , layer (electronics) , organic chemistry , physics , thermodynamics
Abstract Single crystals of tin‐iodide (SnI 2 ) have been grown using the controlled reaction between SnCl 2 and KI by diffusion process in gel medium. As grown (010) surfaces of the crystals have been optically studied. Characteristic etch pits have been observed on them. This suggests that SnI 2 crystals might go into dissolution in the acid‐set gel. By successively etching (010) surfaces in a mixture of ammonia, acetic acid, and CdCl 2 solution, it is established that the pits indicate the site of dislocations in the crystals. This is further confirmed by comparing the etch patterns before and after chemically polishing (010) surfaces. The average dislocation density in the crystals have been evaluated and found to be 3.2 × 10 3 cm −2 and the implications are discussed.

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