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Morphogenetic aspects of the LPE heterostructure growth: Time evolution of configuration entropy
Author(s) -
Šrobár F.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180306
Subject(s) - heterojunction , superlattice , classification of discontinuities , homogeneous , materials science , population , entropy (arrow of time) , condensed matter physics , physics , statistical physics , thermodynamics , mathematics , mathematical analysis , demography , sociology
The concept of the configuration entropy Δ S conf , introduced originally in the context of heterojunction superlattices, is extended to cover general one‐dimensional concentration profiles. Changes in Δ S conf as well as in its production rate P conf = d ΔS conf / dt accompanying the growth of single and double Al x Ga 1– x As based heterostructures are evaluated for a suitable set of relevant parameters. — Δ S conf is shown to increase monotonously during the growth process, while the — P conf vs t dependences may exhibit sharp maxima and discontinuities in response to movements of the LPE apparatus slide. Given the fact that Δ S conf measures departure of the atomic population from the homogeneous (macroscopically structureless) equilibrium condition, such studies in effect monitor time distribution of the morphogenetic activity by the LPE growth processes.