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Investigation of shallow strain distributions in silicon single crystals with X‐ray bragg reflection
Author(s) -
Zaumseil P.,
Winter U.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180216
Subject(s) - reflection (computer programming) , silicon , bragg's law , crystal (programming language) , materials science , strain (injury) , boron , x ray , optics , diffusion , condensed matter physics , crystallography , physics , chemistry , diffraction , optoelectronics , thermodynamics , medicine , computer science , nuclear physics , programming language
The use of X‐ray double crystal diffractometry in Bragg case reflection for the determination of shallow strain distributions is investigated. Based on the theory of Takagi‐Taupin theoretical calculations of reflection curves of silicon crystals with diffusion induced strain profiles are carried out for different wave lengths and reflections. Possibilities for an optimal choise of reflections are discussed and the limits of detectibility are estimated. Experimental results of boron diffused silicon crystals confirm the theoretical results. Triple crystal diffractometry of (+n, –n, +n) setting is discussed as one possibility to increase the sensibility.