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Orientation relationships of aluminium nitride on sapphire
Author(s) -
Sokolov E. B.,
Malyukov B. A.,
Kudakov U. D.,
Naida G. A.
Publication year - 1983
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170180110
Subject(s) - misorientation , sapphire , epitaxy , materials science , aluminium nitride , orientation (vector space) , nitride , layer (electronics) , substrate (aquarium) , condensed matter physics , plane (geometry) , crystallography , aluminium , field (mathematics) , projection (relational algebra) , geometry , optics , composite material , physics , chemistry , geology , mathematics , microstructure , laser , oceanography , pure mathematics , algorithm , grain boundary
Orientation relationships of aluminium nitride on sapphire (11 2 6) AlN/(01 1 2) Al 2 O 3 have been defined more exactly by X‐ray diffractometry techniques. It has been found that, depending on the substrate misorientation from the surface plane (01 1 2), there can exist two kinds of azimuthal orientation of the epitaxial layer of AlN, namely, the projection of [0001] AlN on plane (01 1 2) Al 2 O 3 can coincide either with [ 2 110] Al 2 O 3 or with [2 1 1 0] Al 2 O 3 direction. The vector field of the epitaxial layer inclination relative to the substrate misorientation has been drawn. The symmetry of this field obeys Neumann's rule. The epitaxial layer orientation has been found to depend on the sapphire substrate misorientation in direction [2 1 1 0].