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Laser Annealing of Chemical Bath Deposited CdS Films
Author(s) -
Martinez G.,
Martínez J. L.,
Zehe A.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170171211
Subject(s) - annealing (glass) , electrical resistivity and conductivity , crystallite , materials science , semiconductor , analytical chemistry (journal) , laser , mineralogy , metallurgy , chemistry , optoelectronics , optics , environmental chemistry , physics , electrical engineering , engineering
Chemical Bath Deposited (CBD) CdS films have been exposed to a cw Ar + laser annealing. Measurementes on the dark electrical resistivity have shown a two decade decrement in the resistivity. A trend of improving this resistivity is shown upon atmospheric pressure increase. The annealing mechanisms of the samples show a threshold laser power density of 50 W/cm 2 . This power threshold accounts for some heating mechanisms and Cd ion evaporation from the samples; thus a gaseous Cd atmosphere annealing process is suggested. This laser annealing mechanism parallels thermal annealing of polycrystalline CdS films. Assessment of this mechanisms is supported by the fact that the mobility ratio, b = μ n /μ p , (greatly influenced by crystallite size and intergranular potential barrier in thin film semiconductors) does not show major changes to account for a two decade decrement of CBD laser annealed samples.