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Study of In x Ga 1– x P/GaAs Films Formation on the Basis of In–Ga–P Liquidus Precised Investigation
Author(s) -
Bolkhovityanov Yu. B.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170171205
Subject(s) - liquidus , supercooling , isothermal process , solid solution , thermodynamics , substrate (aquarium) , supersaturation , chemistry , materials science , crystallization , crystallography , condensed matter physics , phase (matter) , metallurgy , physics , oceanography , organic chemistry , geology
It is shown that the In–Ga–P melt which is prepared by contacting with the GaP seed becomes supersaturated in reality. Some peculiarities of In x Ga 1– x P/GaAs films formation at quasi‐equilibrium conditions are described. It is observed that the saturated In–Ga–P melt dissolves the GaAs substrate when isothermally contacting if the In x Ga 1– x P equilibrium solid has the lattice parameter less than that of GaAs. As a result some InGaAsp deposit arises on the substrate. This phenomenon takes place if the In–Ga–P melt is just supercooled. This instability of the liquid‐solid interface is explained on the basis of the relaxation theory of non‐equilibrium liquid‐solid contact which has been created by the author in previous papers.