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Growth of Heterostructures Based on InAs–Al x Ga 1– x Sb
Author(s) -
Pramatarova L. D.,
Tret'Yakov D. N.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170171202
Subject(s) - epitaxy , heterojunction , materials science , liquid phase , crystallography , phase (matter) , crystal growth , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , physics , thermodynamics , chromatography , organic chemistry , layer (electronics)
It is reported on the liquid phase epitaxial (LPE) growth of heterostructures on the base of InAs–Al x Ga 1– x Sb. The paper includes the investigation of epitaxial layers of Al x Ga 1– x Sb alloys on InAs substrates and results of experiments for the determination of optimum growth regimes.
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