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Kinetics of the Incorporation of Dopants into Epitaxial CVD Silicon
Author(s) -
Kühne H.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170171007
Subject(s) - dopant , adsorption , epitaxy , kinetics , silicon , chemical engineering , layer (electronics) , materials science , growth rate , doping , chemistry , inorganic chemistry , nanotechnology , metallurgy , optoelectronics , physics , quantum mechanics , engineering , geometry , mathematics
Starting from the gas‐phase‐transport‐controlled and reaction‐controlled incorporation mechanisms and the equilibrium incorporation of the dopants a critical study of the adsorption model is carried through, as a result of which a model of adsorption is proposed. This modified model reflects the incorporation concentration of the dopants as a function of the layer growth rate and contains the equilibrium incorporation of dopants as a border‐line case for a layer growth rate of zero.