Kinetics of the Incorporation of Dopants into Epitaxial CVD Silicon | Zendy

Kühne H. | Zendy

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Kinetics of the Incorporation of Dopants into Epitaxial CVD Silicon

Author(s) -

Kühne H.

Publication year - 1982

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170171007

Subject(s) - dopant , adsorption , epitaxy , kinetics , silicon , chemical engineering , layer (electronics) , materials science , growth rate , doping , chemistry , inorganic chemistry , nanotechnology , metallurgy , optoelectronics , physics , quantum mechanics , engineering , geometry , mathematics

Starting from the gas‐phase‐transport‐controlled and reaction‐controlled incorporation mechanisms and the equilibrium incorporation of the dopants a critical study of the adsorption model is carried through, as a result of which a model of adsorption is proposed. This modified model reflects the incorporation concentration of the dopants as a function of the layer growth rate and contains the equilibrium incorporation of dopants as a border‐line case for a layer growth rate of zero.

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