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Photoemission studies of Titanium Oxides
Author(s) -
Wagner N.,
Brümmer O.,
Sauer N.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170914
Subject(s) - x ray photoelectron spectroscopy , sputtering , titanium , oxygen , materials science , analytical chemistry (journal) , oxide , diffusion , titanium oxide , photoemission spectroscopy , chemistry , thin film , nanotechnology , chemical engineering , metallurgy , organic chemistry , chromatography , engineering , physics , thermodynamics
Titanium exposed to dry air at varying temperatures are studied by X‐ray photoelectron spectroscopy (XPS) in combination with low energy Ar ion sputtering. The 2 nm deposit formed at room temperature in 30 d is an oxide mixture with chiefly Ti 2 O 3 . This result is indicated by the Ti(2p) level binding energy, FWHM and asymmetry. The dry air exposures at high temperatures resulted in oxide species of nonstoichiometric TiO 2– x . As proposed from sputtering effects to XP‐spectra the oxygen deficient TiO 2– x surface region includes Ti 3+ ‐interstitials. These interstitials act as donors (emission to (3d)‐states) and hinder the oxygen diffusion via interstitials (temperature: ≦ 550 °C). It is to be noted that electron emission from donor states is favoured in deeper lying (2p)‐states by decreasing concentration of oxygen vacancies.

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